FDD6N50TM-WS onsemi
Артикул
FDD6N50TM-WS
Бренд
onsemi
Описание
MOSFET N-CH 500V 6A DPAK, N-Channel 500 V 6A (Tc) 89W (Tc) Surface Mount TO-252AA
Цена
227 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD6N50TM-WS.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Supplier Device Package
TO-252AA
Other Names
FDD6N50TM-WSDKR,FDD6N50TM-WSTR,FDD6N50TM_WSCT,FDD6N50TMWS,FDD6N50TM_WSDKR,FDD6N50TM_WSCT-ND,FDD6N50TM_WSTR-ND,FDD6N50TM_WSDKR-ND,FDD6N50TM_WS,FDD6N50TM_WSTR,FDD6N50TM-WSCT
Series
UniFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD6N50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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