FDD850N10LD onsemi
Артикул
FDD850N10LD
Бренд
onsemi
Описание
MOSFET N-CH 100V 15.3A TO252-4L, N-Channel 100 V 15.3A (Tc) 42W (Tc) Surface Mount TO-252 (DPAK)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD850N10LD.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1465 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-252 (DPAK)
Other Names
FDD850N10LDTR,FDD850N10LDDKR,FDD850N10LDCT,FDD850N10LD-ND
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD850
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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