FDD86110 onsemi
Артикул
FDD86110
Бренд
onsemi
Описание
MOSFET N-CH 100V 12.5A/50A DPAK, N-Channel 100 V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
Цена
498 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD86110.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
10.2mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2265 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 127W (Tc)
Supplier Device Package
TO-252AA
Other Names
FDD86110CT,FDD86110TR,FDD86110-ND,ONSONSFDD86110,FDD86110DKR,2156-FDD86110-OS
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD861
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут