FDD86113LZ onsemi
Артикул
FDD86113LZ
Бренд
onsemi
Описание
MOSFET N-CH 100V 4.2A/5.5A DPAK, N-Channel 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA
Цена
231 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDD86113LZ.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
104mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
285 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 29W (Tc)
Supplier Device Package
TO-252AA
Other Names
FDD86113LZFSDKR,FDD86113LZFSCT,FDD86113LZFSTR,FDD86113LZ-ND
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDD86113
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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