FDFS2P102 onsemi
Артикул
FDFS2P102
Бренд
onsemi
Описание
MOSFET P-CH 20V 3.3A 8SOIC, P-Channel 20 V 3.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDFS2P102.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
900mW (Ta)
FET Type
P-Channel
Supplier Device Package
8-SOIC
Other Names
FDFS2P102_NLCT-ND,FDFS2P102_NLCT,FDFS2P102_NLTR-ND,FDFS2P102TR-NDR,FDFS2P102_NLTR,FDFS2P102CT,FDFS2P102CT-NDR,FDFS2P102_NL,FDFS2P102TR,FDFS2P102DKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,500
Base Product Number
FDFS2
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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