FDMC2610 onsemi
Артикул
FDMC2610
Бренд
onsemi
Описание
MOSFET N-CH 200V 2.2A/9.5A 8MLP, N-Channel 200 V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
Цена
348 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDMC2610.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)
Other Names
FDMC2610DKR,FDMC2610TR,2156-FDMC2610-OS,FDMC2610CT
Series
UniFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDMC26
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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