FDMS1D4N03S onsemi
Артикул
FDMS1D4N03S
Бренд
onsemi
Описание
MOSFET N-CH 30V 211A 8PQFN, N-Channel 30 V 211A (Tc) 74W (Tc) Surface Mount 8-PQFN (5x6)
Цена
157 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDMS1D4N03S.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
211A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.09mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
10250 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
74W (Tc)
Supplier Device Package
8-PQFN (5x6)
Other Names
FDMS1D4N03SCT,FDMS1D4N03SDKR,2832-FDMS1D4N03STR,FDMS1D4N03STR
Series
PowerTrench®, SyncFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDMS1D4
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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