FDMS4D0N12C onsemi
Артикул
FDMS4D0N12C
Бренд
onsemi
Описание
MOSFET N-CH 120V 18.5A/114A 8QFN, N-Channel 120 V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6)
Цена
935 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDMS4D0N12C.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 370A
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6460 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta), 106W (Tc)
Supplier Device Package
8-PQFN (5x6)
Other Names
FDMS4D0N12COSDKR,FDMS4D0N12C-ND,FDMS4D0N12COSTR,FDMS4D0N12COSCT
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDMS4
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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