FDP100N10 onsemi
Артикул
FDP100N10
Бренд
onsemi
Описание
MOSFET N-CH 100V 75A TO220-3, N-Channel 100 V 75A (Tc) 208W (Tc) Through Hole TO-220-3
Цена
544 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP100N10.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Supplier Device Package
TO-220-3
Other Names
FAIFSCFDP100N10,2156-FDP100N10-OS
Series
PowerTrench®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDP100
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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