FDP2710-F085 onsemi
Артикул
FDP2710-F085
Бренд
onsemi
Описание
MOSFET N-CH 250V 4A TO220-3, N-Channel 250 V 4A (Ta) 403W (Tc) Through Hole TO-220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP2710-F085.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
47mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
101 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
5690 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
403W (Tc)
Supplier Device Package
TO-220-3
Other Names
FDP2710_F085,FDP2710_F085-ND
Series
Automotive, AEC-Q101, PowerTrench®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDP2710
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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