FDP2D3N10C onsemi
Артикул
FDP2D3N10C
Бренд
onsemi
Описание
MOSFET N-CH 100V 222A TO220-3, N-Channel 100 V 222A (Tc) 214W (Tc) Through Hole TO-220-3
Цена
1 132 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP2D3N10C.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11180 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Supplier Device Package
TO-220-3
Other Names
2156-FDP2D3N10C-OS,ONSONSFDP2D3N10C
Series
PowerTrench®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDP2D3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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