FDP2D9N12C onsemi
Артикул
FDP2D9N12C
Бренд
onsemi
Описание
PTNG 120V N-FET TO220, N-Channel 120 V 18A (Ta), 210A (Tc) 2.4W (Ta), 333W (Tc) Through Hole TO-220
Цена
769 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP2D9N12C.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 686µA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8894 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 333W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220
Moisture Sensitivity Level (MSL)
Not Applicable
Series
PowerTrench®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FDP2
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
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