FDP5645 onsemi
Артикул
FDP5645
Бренд
onsemi
Описание
MOSFET N-CH 60V 80A TO220-3, N-Channel 60 V 80A (Ta) 125W (Tc) Through Hole TO-220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP5645.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4468 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220-3
Series
PowerTrench®
Package
Tube
Part Status
Obsolete
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Base Product Number
FDP56
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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