FDP8N50NZ onsemi
Артикул
FDP8N50NZ
Бренд
onsemi
Описание
MOSFET N-CH 500V 8A TO220-3, N-Channel 500 V 8A (Tc) 130W (Tc) Through Hole TO-220-3
Цена
300 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDP8N50NZ.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
735 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220-3
Moisture Sensitivity Level (MSL)
Not Applicable
Series
UniFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Base Product Number
FDP8
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
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