FDR6580 onsemi
Артикул
FDR6580
Бренд
onsemi
Описание
MOSFET N-CH 20V 11.2A SUPERSOT8, N-Channel 20 V 11.2A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDR6580.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 11.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3829 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
FET Type
N-Channel
Supplier Device Package
SuperSOT™-8
Series
PowerTrench®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-LSOP (0.130", 3.30mm Width)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDR65
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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