FDS6675BZ onsemi
Артикул
FDS6675BZ
Бренд
onsemi
Описание
MOSFET P-CH 30V 11A 8SOIC, P-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Цена
140 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDS6675BZ.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2470 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Supplier Device Package
8-SOIC
Other Names
FAIFSCFDS6675BZ,FDS6675BZCT,FDS6675BZDKR,FDS6675BZTR,2156-FDS6675BZ-OS
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDS6675
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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