FDS6680S onsemi
Артикул
FDS6680S
Бренд
onsemi
Описание
MOSFET N-CH 30V 11.5A 8SOIC, N-Channel 30 V 11.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDS6680S.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Supplier Device Package
8-SOIC
Series
PowerTrench®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDS66
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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