FDS86267P onsemi
Артикул
FDS86267P
Бренд
onsemi
Описание
MOSFET P-CH 150V 2.2A 8SOIC, P-Channel 150 V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC
Цена
174 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDS86267P.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
255mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Supplier Device Package
8-SOIC
Other Names
FDS86267PCT,FDS86267PDKR,FDS86267PTR
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDS86267
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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