FDS8962C onsemi
Артикул
FDS8962C
Бренд
onsemi
Описание
MOSFET N/P-CH 30V 7A/5A 8SOIC, Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/FDS8962C.jpg
Supplier Device Package
8-SOIC
Power - Max
900mW
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7A, 5A
Rds On (Max) @ Id, Vgs
30mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
575pF @ 15V
FET Feature
Logic Level Gate
Other Names
FDS8962C-ND,FDS8962CCT,FDS8962CTR,FDS8962CDKR
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
2,500
Base Product Number
FDS89
REACH Status
REACH Unaffected
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