FDU8880 onsemi
Артикул
FDU8880
Бренд
onsemi
Описание
MOSFET N-CH 30V 13A/58A IPAK, N-Channel 30 V 13A (Ta), 58A (Tc) 55W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDU8880.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1260 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
FET Type
N-Channel
Supplier Device Package
I-PAK
Series
PowerTrench®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,800
Base Product Number
FDU88
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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