FDV302P onsemi
Артикул
FDV302P
Бренд
onsemi
Описание
MOSFET P-CH 25V 120MA SOT23, P-Channel 25 V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Цена
35 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDV302P.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.31 nC @ 4.5 V
Vgs (Max)
-8V
Input Capacitance (Ciss) (Max) @ Vds
11 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Supplier Device Package
SOT-23-3
Other Names
FDV302PTR,FDV302PCT,2156-FDV302P-OS,FDV302PCT-NDR,2832-FDV302P-488,FDV302PTR-NDR,FDV302PDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Base Product Number
FDV30
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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