FGA25N120ANDTU onsemi
Артикул
FGA25N120ANDTU
Бренд
onsemi
Описание
IGBT 1200V 40A 310W TO3P, IGBT NPT 1200 V 40 A 310 W Through Hole TO-3P
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGA25N120ANDTU.jpg
Current - Collector (Ic) (Max)
40 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
310 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
350 ns
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 25A
Current - Collector Pulsed (Icm)
75 A
Switching Energy
4.8mJ (on), 1mJ (off)
Gate Charge
200 nC
Td (on/off) @ 25°C
60ns/170ns
Input Type
Standard
Supplier Device Package
TO-3P
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FGA25
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
600V, 25A, 10Ohm, 15V
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