FGA25N120ANTDTU-F109 onsemi
Артикул
FGA25N120ANTDTU-F109
Бренд
onsemi
Описание
IGBT 1200V 50A 312W TO3P, IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
Цена
625 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGA25N120ANTDTU-F109.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
312 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
350 ns
IGBT Type
NPT and Trench
Vce(on) (Max) @ Vge, Ic
2.65V @ 15V, 50A
Current - Collector Pulsed (Icm)
90 A
Switching Energy
4.1mJ (on), 960µJ (off)
Gate Charge
200 nC
Td (on/off) @ 25°C
50ns/190ns
Supplier Device Package
TO-3P
Other Names
FGA25N120ANTDTU_F109,FGA25N120ANTDTU_F109-ND
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FGA25N120
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
Test Condition
600V, 25A, 10Ohm, 15V
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