FGA6560WDF onsemi
Артикул
FGA6560WDF
Бренд
onsemi
Описание
IGBT TRENCH/FS 650V 120A TO3PN, IGBT Trench Field Stop 650 V 120 A 306 W Through Hole TO-3PN
Цена
517 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGA6560WDF.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Power - Max
306 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
110 ns
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 60A
Current - Collector Pulsed (Icm)
180 A
Switching Energy
2.46mJ (on), 520µJ (off)
Gate Charge
84 nC
Td (on/off) @ 25°C
25.6ns/71ns
Supplier Device Package
TO-3PN
Other Names
ONSONSFGA6560WDF,2156-FGA6560WDF-OS
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FGA6560
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
Test Condition
400V, 60A, 6Ohm, 15V
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