FGH40T65SQD_F155 onsemi
Артикул
FGH40T65SQD_F155
Бренд
onsemi
Описание
650V FS4 TRENCH IGBT, IGBT Trench Field Stop 650 V 80 A 238 W Through Hole TO-247-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGH40T65SQD_F155.jpg
Current - Collector (Ic) (Max)
80 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Power - Max
238 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
31.8 ns
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Current - Collector Pulsed (Icm)
160 A
Switching Energy
138µJ (on), 52µJ (off)
Gate Charge
80 nC
Td (on/off) @ 25°C
16.4ns/86.4ns
Input Type
Standard
Supplier Device Package
TO-247-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FGH40
RoHS Status
ROHS3 Compliant
Test Condition
400V, 10A, 6Ohm, 15V
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