FJV4105RMTF onsemi
Артикул
FJV4105RMTF
Бренд
onsemi
Описание
TRANS PREBIAS PNP 200MW SOT23-3, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount SOT-23-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Pre-Biased, Транзисторы - биполярные (BJT) - одиночные, с предварительной изоляцией
Image
files/FJV4105RMTF.jpg
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Power - Max
200 mW
Frequency - Transition
200 MHz
REACH Status
REACH Unaffected
Resistor - Base (R1)
4.7 kOhms
Transistor Type
PNP - Pre-Biased
Supplier Device Package
SOT-23-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tape & Reel (TR)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
3,000
Base Product Number
FJV410
Resistor - Emitter Base (R2)
10 kOhms
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