FQA10N60C onsemi
Артикул
FQA10N60C
Бренд
onsemi
Описание
MOSFET N-CH 600V 10A TO3P, N-Channel 600 V 10A (Tc) 192W (Tc) Through Hole TO-3P
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA10N60C.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-3P
Series
QFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
FQA1
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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