FQA10N80C-F109 onsemi
Артикул
FQA10N80C-F109
Бренд
onsemi
Описание
MOSFET N-CH 800V 10A TO3P, N-Channel 800 V 10A (Tc) 240W (Tc) Through Hole TO-3P
Цена
741 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA10N80C-F109.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Supplier Device Package
TO-3P
Other Names
ONSONSFQA10N80C-F109,FQA10N80C_F109FS-ND,FQA10N80C_F109,FQA10N80C_F109-ND,FQA10N80CF109,2156-FQA10N80C-F109-OS,FQA10N80C_F109FS
Series
QFET®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FQA10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут