FQA19N60 onsemi
Артикул
FQA19N60
Бренд
onsemi
Описание
MOSFET N-CH 600V 18.5A TO3PN, N-Channel 600 V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
Цена
767 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA19N60.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-3PN
Other Names
FQA19N60-ND,FQA19N60FS,488-FQA19N60
Series
QFET®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FQA19
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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