FQB5N60CTM onsemi
Артикул
FQB5N60CTM
Бренд
onsemi
Описание
MOSFET N-CH 600V 4.5A D2PAK, N-Channel 600 V 4.5A (Tc) 3.13W (Ta), 100W (Tc) Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQB5N60CTM.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 100W (Tc)
FET Type
N-Channel
Supplier Device Package
D?PAK (TO-263)
Series
QFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FQB5
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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