FQB9P25TM onsemi
Артикул
FQB9P25TM
Бренд
onsemi
Описание
MOSFET P-CH 250V 9.4A D2PAK, P-Channel 250 V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D?PAK (TO-263)
Цена
179 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQB9P25TM.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
620mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 120W (Tc)
Supplier Device Package
D?PAK (TO-263)
Other Names
FQB9P25TMDKR,FQB9P25TM-ND,FQB9P25TMTR,FQB9P25TMCT
Series
QFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
FQB9
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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