FQD12N20LTM onsemi
Артикул
FQD12N20LTM
Бренд
onsemi
Описание
MOSFET N-CH 200V 9A DPAK, N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Цена
172 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQD12N20LTM.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Supplier Device Package
TO-252AA
Other Names
FQD12N20LTMCT,FQD12N20LTMDKR,FQD12N20LTMTR,FQD12N20LTM-ND,2156-FQD12N20LTM-488
Series
QFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FQD12N20
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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