FQH8N100C onsemi
Артикул
FQH8N100C
Бренд
onsemi
Описание
MOSFET N-CH 1000V 8A TO247-3, N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-247-3
Цена
603 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQH8N100C.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Supplier Device Package
TO-247-3
Other Names
2156-FQH8N100C-OS,ONSONSFQH8N100C
Series
QFET®
Package
Tube
Part Status
Last Time Buy
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
FQH8N100
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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