FQN1N50CTA onsemi
Артикул
FQN1N50CTA
Бренд
onsemi
Описание
MOSFET N-CH 500V 380MA TO92-3, N-Channel 500 V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3
Цена
112 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQN1N50CTA.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
380mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890mW (Ta), 2.08W (Tc)
Supplier Device Package
TO-92-3
Other Names
FQN1N50CTA-ND,FQN1N50CTACT,FQN1N50CTADKRINACTIVE,FQN1N50CTADKR,2156-FQN1N50CTA-OS,FQN1N50CTADKR-ND,FQN1N50CTATB
Series
QFET®
Package
Cut Tape (CT)Tape & Box (TB)
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
Base Product Number
FQN1N50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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