FQPF9N50CF onsemi
Артикул
FQPF9N50CF
Бренд
onsemi
Описание
POWER FIELD-EFFECT TRANSISTOR, 9, N-Channel 500 V 9A (Tc) 44W (Tc) Through Hole TO-220F-3
Цена
141 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQPF9N50CF.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220F-3
Series
FRFET®
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
Other Names
2156-FQPF9N50CF-488
Standard Package
1
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Power Dissipation (Max)
44W (Tc)
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