FQT4N20LTF onsemi
Артикул
FQT4N20LTF
Бренд
onsemi
Описание
MOSFET N-CH 200V 850MA SOT223-4, N-Channel 200 V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4
Цена
110 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQT4N20LTF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Tc)
Supplier Device Package
SOT-223-4
Other Names
FQT4N20LTFDKR,FAIFSCFQT4N20LTF,FQT4N20LTF-ND,FQT4N20LTFTR,FQT4N20LTFCT,2156-FQT4N20LTF-OS
Series
QFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Base Product Number
FQT4N20
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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