FQU12N20TU onsemi
Артикул
FQU12N20TU
Бренд
onsemi
Описание
MOSFET N-CH 200V 9A IPAK, N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Цена
117 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQU12N20TU.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
FET Type
N-Channel
Supplier Device Package
I-PAK
Moisture Sensitivity Level (MSL)
Not Applicable
Series
QFET®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,040
Base Product Number
FQU12N20
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
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