HGT1S10N120BNST onsemi
Артикул
HGT1S10N120BNST
Бренд
onsemi
Описание
IGBT 1200V 35A 298W TO263AB, IGBT NPT 1200 V 35 A 298 W Surface Mount D?PAK (TO-263)
Цена
491 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGT1S10N120BNST.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
35 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
298 W
REACH Status
REACH Unaffected
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector Pulsed (Icm)
80 A
Switching Energy
320µJ (on), 800µJ (off)
Gate Charge
100 nC
Td (on/off) @ 25°C
23ns/165ns
Supplier Device Package
D?PAK (TO-263)
Other Names
HGT1S10N120BNST-ND,HGT1S10N120BNSTCT,HGT1S10N120BNSTDKR,HGT1S10N120BNSTTR
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
HGT1S10
RoHS Status
ROHS3 Compliant
Test Condition
960V, 10A, 10Ohm, 15V
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