HGT1S12N60A4DS onsemi
Артикул
HGT1S12N60A4DS
Бренд
onsemi
Описание
IGBT 600V 54A 167W D2PAK, IGBT - 600 V 54 A 167 W Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGT1S12N60A4DS.jpg
Current - Collector (Ic) (Max)
54 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
167 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
30 ns
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector Pulsed (Icm)
96 A
Switching Energy
55µJ (on), 50µJ (off)
Gate Charge
78 nC
Td (on/off) @ 25°C
17ns/96ns
Input Type
Standard
Supplier Device Package
D?PAK (TO-263)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
HGT1S12
RoHS Status
ROHS3 Compliant
Test Condition
390V, 12A, 10Ohm, 15V
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