HGT1S7N60A4DS onsemi
Артикул
HGT1S7N60A4DS
Бренд
onsemi
Описание
IGBT 600V 34A 125W TO263AB, IGBT - 600 V 34 A 125 W Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGT1S7N60A4DS.jpg
Current - Collector (Ic) (Max)
34 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
125 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
34 ns
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 7A
Current - Collector Pulsed (Icm)
56 A
Switching Energy
55µJ (on), 60µJ (off)
Gate Charge
37 nC
Td (on/off) @ 25°C
11ns/100ns
Input Type
Standard
Supplier Device Package
D?PAK (TO-263)
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Base Product Number
HGT1S7N60
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
390V, 7A, 25Ohm, 15V
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