HGTD1N120BNS9A onsemi
Артикул
HGTD1N120BNS9A
Бренд
onsemi
Описание
IGBT 1200V 5.3A 60W TO252AA, IGBT NPT 1200 V 5.3 A 60 W Surface Mount TO-252AA
Цена
289 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTD1N120BNS9A.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
5.3 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
60 W
REACH Status
REACH Unaffected
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 1A
Current - Collector Pulsed (Icm)
6 A
Switching Energy
70µJ (on), 90µJ (off)
Gate Charge
14 nC
Td (on/off) @ 25°C
15ns/67ns
Supplier Device Package
TO-252AA
Other Names
HGTD1N120BNS9ATR,HGTD1N120BNS9A-ND,HGTD1N120BNS9ACT,HGTD1N120BNS9ADKR
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
HGTD1N120
RoHS Status
ROHS3 Compliant
Test Condition
960V, 1A, 82Ohm, 15V
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