HGTP5N120BND onsemi
Артикул
HGTP5N120BND
Бренд
onsemi
Описание
IGBT 1200V 21A 167W TO220AB, IGBT NPT 1200 V 21 A 167 W Through Hole TO-220-3
Цена
282 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTP5N120BND.jpg
Current - Collector (Ic) (Max)
21 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
167 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
65 ns
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 5A
Current - Collector Pulsed (Icm)
40 A
Switching Energy
450µJ (on), 390µJ (off)
Gate Charge
53 nC
Td (on/off) @ 25°C
22ns/160ns
Input Type
Standard
Supplier Device Package
TO-220-3
Moisture Sensitivity Level (MSL)
Not Applicable
Series
-
Package
Tube
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
HGTP5N120
RoHS Status
ROHS3 Compliant
Test Condition
960V, 5A, 25Ohm, 15V
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