HGTP7N60B3D onsemi
Артикул
HGTP7N60B3D
Бренд
onsemi
Описание
IGBT 600V 14A 60W TO220AB, IGBT - 600 V 14 A 60 W Through Hole TO-220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTP7N60B3D.jpg
Current - Collector (Ic) (Max)
14 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
60 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
37 ns
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 7A
Current - Collector Pulsed (Icm)
56 A
Switching Energy
160µJ (on), 120µJ (off)
Gate Charge
23 nC
Td (on/off) @ 25°C
26ns/130ns
Input Type
Standard
Supplier Device Package
TO-220-3
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
400
Base Product Number
HGTP7N60
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
480V, 7A, 50Ohm, 15V
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