IRL8113PBF onsemi
Артикул
IRL8113PBF
Бренд
onsemi
Описание
HEXFET POWER MOSFET, N-Channel 30 V 105A (Tc) 110W (Tc) Through Hole TO-220AB
Цена
57 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL8113PBF.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 15 V
FET Type
N-Channel
REACH Status
Vendor Undefined
Supplier Device Package
TO-220AB
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Other Names
2156-IRL8113PBF,IFEONSIRL8113PBF
Standard Package
1
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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