MJD112G onsemi
Артикул
MJD112G
Бренд
onsemi
Описание
TRANS NPN DARL 100V 2A DPAK, Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK
Цена
133 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJD112G.jpg
Other Names
MJD112G-ND,2156-MJD112G-OS,ONSONSMJD112G,MJD112GOS
Supplier Device Package
DPAK
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Base Product Number
MJD112
REACH Status
REACH Unaffected
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