MJE13009G onsemi
Артикул
MJE13009G
Бренд
onsemi
Описание
TRANS NPN 400V 12A TO220AB, Bipolar (BJT) Transistor NPN 400 V 12 A 4MHz 2 W Through Hole TO-220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJE13009G.jpg
Supplier Device Package
TO-220
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
3V @ 3A, 12A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
2 W
Frequency - Transition
4MHz
Other Names
MJE13009GOS
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Product Number
MJE13
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
REACH Status
REACH Unaffected
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