MTB50P03HDLT4G onsemi
Артикул
MTB50P03HDLT4G
Бренд
onsemi
Описание
MOSFET P-CH 30V 50A D2PAK, P-Channel 30 V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D?PAK
Цена
704 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/MTB50P03HDLT4G.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 125W (Tc)
Supplier Device Package
D?PAK
Other Names
MTB50P03HDLT4GOSDKR,MTB50P03HDLT4GOSTR,MTB50P03HDLT4GOS,MTB50P03HDLT4GOSCT,MTB50P03HDLT4GOS-ND
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
MTB50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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