MTW32N20E onsemi
Артикул
MTW32N20E
Бренд
onsemi
Описание
MOSFET N-CH 200V 32A TO247, N-Channel 200 V 32A (Tc) 180W (Tc) Through Hole TO-247
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/MTW32N20E.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Supplier Device Package
TO-247
Other Names
MTW32N20EOS
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
MTW32
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут