MTY100N10E onsemi
Артикул
MTY100N10E
Бренд
onsemi
Описание
MOSFET N-CH 100V 100A TO264, N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole TO-264
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/MTY100N10E.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
378 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10640 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-264
Other Names
MTY100N10EOS
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
Base Product Number
MTY10
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут