MUN5235DW1T1G onsemi
Артикул
MUN5235DW1T1G
Бренд
onsemi
Описание
TRANS 2NPN PREBIAS 0.25W SOT363, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA - 250mW Surface Mount SC-88/SC70-6/SOT-363
Цена
48 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Транзисторы - биполярные (BJT) - массивы, с предварительным сопряжением
Image
files/MUN5235DW1T1G.jpg
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Power - Max
250mW
Frequency - Transition
-
REACH Status
REACH Unaffected
Resistor - Base (R1)
2.2kOhms
Supplier Device Package
SC-88/SC70-6/SOT-363
Other Names
MUN5235DW1T1GOSTR,MUN5235DW1T1G-ND,MUN5235DW1T1GOSCT,MUN5235DW1T1GOSDKR,=MUN5235DW1T1GOSCT-ND
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Base Product Number
MUN5235
RoHS Status
ROHS3 Compliant
Resistor - Emitter Base (R2)
47kOhms
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